| PART |
Description |
Maker |
| RA55H3340M10 RA55H3340M-101 |
330-400MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
|
| RA07N3340M RA07N3340M-01 |
330-400MHz 7.5W 9.6V 2 Stage Amp. For PORTABLE RADIO
|
Mitsubishi Electric Sem...
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| RA07H3340M10 RA07H3340M-101 |
RoHS Compliance ,330-400MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
|
| RA30H3340M_06 RA30H3340M RA30H3340M-101 RA30H3340M |
RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RA55H4452M-101 |
RF MOSFET MODULE 440-520MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| RA55H3847M RA55H3847M-101 |
RF MOSFET MODULE 380-470MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| D2008UK D2008 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-400MHz,Single Ended)(镀金多用DMOS射频硅场效应5W-28V-400MHz,单端)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| ADS-5524 |
55W Single Output with 5V,4A DC-DC Converter
|
Mean Well Enterprises Co., Ltd.
|
| ADS-5524 |
55W Single Output with 5V,4A DC-DC Converter
|
Mean Well Enterprises C...
|
| D2007UK D2007 |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-400MHz,Single Ended)(镀金多用DMOS射频硅场效应5W-28V-400MHz,单端)
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
